ECEA 5721 Introduction to Power Switches
1st course in the Power Semiconductor Devices Specialization
Instructor: Bart Van Zeghbroeck,听PhD, Professor
Power Semiconductor devices that are commonly used in power electronic circuits. Starting with the circuit models of these devices, we will identify the requirements leading to low loss circuits and learn how these can be simulated and analyzed in basic switching circuits.
Prior knowledge needed:听Students are expected to have an undergraduate-level active circuit knowledge and some experience with LTSPICE. Students who have not used LTSPICE before, should expect to spend more than the estimated time needed to complete the simulation-based assignments.
Learning Outcomes
Provide students with a basic understanding of semiconductor power switches
Students will be able to identify important device characteristics, such as on-state and switching loss.
Students will learn to model as well as simulate these devices individually and in a power converter circuit.
Syllabus
This module explains 1) the need for power conversion using a grid-connected solar system with storage and an electric vehicle as examples, 2) lists common power conversion circuits and their device requirements, and 3) provides an overview of different power device characteristics.
Duration: 2 hours
This module introduces key power switches: Diodes, MOSFETs and IGBTs as well as a brief introduction to other power devices including a first comparison.
Duration: 5听hours
This module covers typical device data sheet characteristics including 1) DC nominal and maximum values, 2) Switching parameters and 3) Temperature dependence and maximum allowed temperatures.
Duration: 2听hours
This modules shows how to identify power dissipation in 1) individual diodes and MOSFETs and 2) in a boost convertor circuit containing both a diode and MOSFET.
Duration: 2听hours
Duration: 2听hours
Grading
| Assignment | Percentage of Grade |
| Quiz: M1.1 Need for power conversion | 1% |
| Quiz: M1.2 Power conversion basics | 2% |
| Quiz: M1.3 Power device classification | 1% |
| Quiz: M2.1 Simulation of a diode using LTSPICE | 3% |
| Quiz: M2.2 MOSFET simulation (part 1) | 4% |
| Quiz: M2.2 MOSFET simulation (part 2) | 4% |
| Quiz: M2.3 IGBTs | 1% |
| Quiz: M2.4 Other devices | 1% |
| Quiz: M3.1 DC data sheet characteristics | 1% |
| Quiz: M3.2 Switching parameters | 5% |
| Quiz: M3.3 Thermal resistance and junction temperature | 3% |
| Quiz: M4.1 Device power dissipation | 4% |
| Quiz: M4.2 Boost convertor simulation | 5% |
| Practice Exam | 15% |
| Final Exam | 50% |
Letter Grade Rubric
Letter Grade听 | Minimum Percentage |
| A | 90% |
| A- | 87% |
| B+ | 83% |
| B | 80% |
| B- | 77% |
| C+ | 73% |
| C | 70% |
| C- | 67% |
| D+ | 63% |
| D | 60% |
| F | 0% |
Component List
Reading assignments are provided through Coursera. Suggested reference texts include:
B. Van Zeghbroeck, 鈥淧rinciples of Semiconductor Devices鈥,
B. G. Streetman and S. Banerjee, "Solid State Electronic Devices鈥, Fifth Edition, Prentice Hall, 2000.
S. M. Sze, "Physics of Semiconductor Devices鈥, Second Edition, John Wiley & Sons, 1981.
B. J. Baliga, 鈥淔undamentals of Power Semiconductor Devices鈥, Second Edition, Springer, 2019.听